收藏本站
NTD6416AN, NVD6416AN
N-Channel Power MOSFET
100 V, 17 A, 81 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? AEC Q101 Qualified ? NVD616AN
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
100 V
http://onsemi.com
R DS(on) MAX
81 m W @ 10 V
I D MAX
(Note 1)
17 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
100
$ 20
V
V
N ? Channel
D
Continuous Drain
Current
Steady
State
T C = 25 ° C
T C = 100 ° C
I D
17
11
A
Power Dissipation
Steady
State
T C = 25 ° C
P D
71
W
G
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature Range
Source Current (Body Diode)
I DM
T J , T stg
I S
62
? 55 to
+175
17
A
° C
A
S
4
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 17 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
E AS
T L
43
260
mJ
° C
1 2
3
DPAK
4
1
2
3
IPAK
THERMAL RESISTANCE RATINGS
CASE 369AA
STYLE 2
CASE 369D
STYLE 2
Parameter
Symbol
Max
Unit
Junction ? to ? Case (Drain) Steady State
Junction ? to ? Ambient (Note 1)
R q JC
R q JA
2.1
40
° C/W
MARKING DIAGRAM
& PIN ASSIGNMENTS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
2
3
Source
6416AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 2
1
Publication Order Number:
NTD6416AN/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD6416ANL-1G MOSFET N-CH 100V 19A DPAK
NTD65N03RT4G MOSFET N-CH 25V 9.5A DPAK
NTD6600N-1G MOSFET N-CH 100V 12A IPAK
NTD70N03R-1G MOSFET N-CH 25V 10A IPAK
NTD78N03T4G MOSFET N-CHAN 25V 78A DPAK
NTD80N02-1G MOSFET N-CH 24V 80A IPAK
NTD85N02R-001 MOSFET N-CH 24V 12A IPAK
NTD95N02RT4G MOSFET N-CH 24V 12A DPAK
相关代理商/技术参数
NTD6416ANL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 19 A, 74 mΩ
NTD6416ANL-1G 功能描述:MOSFET NFET DPAK 100V 15A 86MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD6416ANLT4G 功能描述:MOSFET NFET DPAK 100V 17A 106MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD6416ANT4G 功能描述:MOSFET NFET DPAK 100V 19A 96MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD6416ANT4G-CUT TAPE 制造商:ON 功能描述:NTD Series N-Channel 100 V 81 mOhm 71 W Surface Mount Power MOSFET - DPAK-3
NTD65N03R 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD65N03R-001 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD65N03R-035 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube